TRANSPORT-PROPERTIES OF SB2O3 DOPED LASER-ABLATED YBA2CU3O7-DELTA
DSpace at IIT Bombay
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Title |
TRANSPORT-PROPERTIES OF SB2O3 DOPED LASER-ABLATED YBA2CU3O7-DELTA
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Creator |
MURUGESAN, M
PINTO, R PAI, SP APTE, PR SHARON, M GUPTA, LC |
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Subject |
thin-films
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Description |
The effect of Sb2O3 addition on YBa2Cu3O7-alpha films grown on [100] LaAlO3 by pulsed laser ablation has been studied. Transport measurement showed that though the critical temperature T(c) is slightly suppressed upon Sb2O3 doping, the critical current density J(c) increases up to 2.5 x 10(6) A cm-2 at 77 K for the critical concentration of 0.5 wt.% Sb2O3 and then decreases monotonically for further increase in Sb2O3 content. The increase in J(c) with 0.5 wt.% Sb2O3 addition is presumed to be due to the surfactant effect of Sb2O3 and the decrease in J(c) with the further increase of Sb2O3 content has been attributed to the formation of secondary insulating phase YBa2SbO6 as found by X-ray diffraction.
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Publisher |
ELSEVIER SCIENCE BV
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Date |
2011-07-27T04:34:19Z
2011-12-26T12:53:36Z 2011-12-27T05:40:11Z 2011-07-27T04:34:19Z 2011-12-26T12:53:36Z 2011-12-27T05:40:11Z 1994 |
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Type |
Article
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Identifier |
PHYSICA C, 234(3-4), 339-342
0921-4534 http://dx.doi.org/10.1016/0921-4534(94)90583-5 http://dspace.library.iitb.ac.in/xmlui/handle/10054/7115 http://hdl.handle.net/10054/7115 |
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Language |
en
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