Record Details

A new oxide trap-assisted NBTI degradation model

DSpace at IIT Bombay

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Field Value
 
Title A new oxide trap-assisted NBTI degradation model
 
Creator JHA, NK
RAO, VR
 
Subject bias-temperature instability
interface
hydrogen diffusion
interface trap generation
negative bias temperature instability (nbti)
oxide trap
 
Description Using detailed experimental data, we demonstrate that for the correct interpretation of negative bias temperature instability (NBTI) degradation behavior with stress time, it is essential to include the effect of trapping of hydrogen species in the oxide. A new oxide trap-assisted NBTI degradation model is proposed and shown to fit the experimental data very well. Our proposed model can also be used to explain the recently observed phenomenon of higher NBTI degradation for increasing nitrogen concentration in the oxide. We show from numerical calculations that, for higher nitrogen concentration at the interface, one would expect higher NBTI degradation, as also reported recently.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-07-31T17:40:40Z
2011-12-26T12:53:05Z
2011-12-27T05:40:13Z
2011-07-31T17:40:40Z
2011-12-26T12:53:05Z
2011-12-27T05:40:13Z
2005
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 26(9), 687-689
0741-3106
http://dx.doi.org/10.1109/LED.2005.854389
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8187
http://hdl.handle.net/10054/8187
 
Language en