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A Novel Approach to Link Process Parameters to BSIM Model Parameters

DSpace at IIT Bombay

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Title A Novel Approach to Link Process Parameters to BSIM Model Parameters
 
Creator MANDE, S
CHANDORKAR, AN
HSAIO, C
HUANG, K
SHEU, YM
LIU, S
 
Subject analog integrated-circuits
device simulation
optimization
design
technologies
sensitivity
methodology
cmos
design of experiments
principal component analysis
process variations
response surface methodology
variability
 
Description In this paper, we demonstrate a methodology to link process parameters to BSIM model parameters. Here, we have combined well-known statistical methods like principal component analysis (PCA), design of experiments (DOE), and response surface methodology (RSM) to bridge the missing link between process parameters and model parameters. The proposed methodology uses the concept of a correlation matrix, which transforms the process level information to the device and circuit level information through the BSIM model parameters. The proposed methodology has been successfully implemented on an advanced CMOS process. Our results show a strong linear correlation for the data obtained from two techniques namely TCAD technique and the standard HSPICE simulation technique. In both cases the process conditions were kept identical for comparison.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-07-31T18:05:57Z
2011-12-26T12:53:05Z
2011-12-27T05:40:13Z
2011-07-31T18:05:57Z
2011-12-26T12:53:05Z
2011-12-27T05:40:13Z
2009
 
Type Article
 
Identifier IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 22(4), 544-551
0894-6507
http://dx.doi.org/10.1109/TSM.2009.2031782
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8192
http://hdl.handle.net/10054/8192
 
Language en