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A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

DSpace at IIT Bombay

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Title A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device
 
Creator SHRIVASTAVA, M
JAIN, R
BAGHINI, MS
GOSSNER, H
RAO, VR
 
Subject band-to-band tunnelling (btbt)
drain extended
drain-extended mos (demos)
input/output
time-dependent dielectric breakdown (tddb)
 
Description We investigated the surface band-to-band tunnelling (BTBT) current under the OFF-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-07-31T18:57:56Z
2011-12-26T12:53:06Z
2011-12-27T05:40:15Z
2011-07-31T18:57:56Z
2011-12-26T12:53:06Z
2011-12-27T05:40:15Z
2010
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(12), 3536-3539
0018-9383
http://dx.doi.org/10.1109/TED.2010.2082549
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8204
http://hdl.handle.net/10054/8204
 
Language en