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An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs

DSpace at IIT Bombay

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Title An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
 
Creator HARIHARAN, V
VASI, J
RAO, VR
 
Subject current model
drain-current
dg mosfet
compact model
approximation
charge
compact model
dgfet
mosfets
surface potential
 
Description In developing the drain current model of a symmetric double-gate MOSFET, one encounters a transcendental equation relating the value of an intermediate variable beta to the gate and drain voltages. In this brief, we present an enhancement to an existing approximation for beta, which improves its numerical robustness. We also benchmark our suggested enhancement and show that our enhancement is as computationally efficient as the original approximation but is numerically much more robust, with an accuracy that is comparable to the original approximation.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-07-31T19:45:43Z
2011-12-26T12:53:07Z
2011-12-27T05:40:17Z
2011-07-31T19:45:43Z
2011-12-26T12:53:07Z
2011-12-27T05:40:17Z
2009
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(3), 529-532
0018-9383
http://dx.doi.org/10.1109/TED.2008.2011721
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8217
http://hdl.handle.net/10054/8217
 
Language en