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Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation

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Title Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation
 
Creator SANDHYA, C
GANGULY, U
CHATTAR, N
OLSEN, C
SEUTTER, SM
DATE, L
HUNG, R
VASI, JA
MAHAPATRA, S
 
Subject nitride
charge trap flash (ctf)
cycling endurance
program/erase (p/e) window
retention
sanos
silicon nitride (sin)
sonos
 
Description Silicon-nitride trap layer stoichiometry in charge trap flash (CTF) memory strongly impacts electron and hole trap properties, memory performance, and reliability. Important tradeoffs between program/erase (P/E) levels (memory window), P- and E-state retention loss, and E-state window closure during cycling are shown. Increasing the Si richness of the SiN layer improves memory window, cycling endurance, and E-state retention loss but at the cost of higher P-state retention loss. The choice of SiN stoichiometry to optimize CTF memory performance and reliability is discussed.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T02:03:39Z
2011-12-26T12:53:13Z
2011-12-27T05:40:28Z
2011-08-01T02:03:39Z
2011-12-26T12:53:13Z
2011-12-27T05:40:28Z
2009
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 30(2), 171-173
0741-3106
http://dx.doi.org/10.1109/LED.2008.2009552
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8310
http://hdl.handle.net/10054/8310
 
Language en