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Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile

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Title Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile
 
Creator CHENG, BH
RAO, VR
WOO, JCS
 
Subject silicon inversion-layers
asymmetric channel profile
deep-0.1-um mosfets
soi
velocity overshoot
 
Description The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 mu m, The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 x 10(6) cm/s for a device with L(eff) = 0.08 mu m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T03:09:42Z
2011-12-26T12:53:14Z
2011-12-27T05:40:29Z
2011-08-01T03:09:42Z
2011-12-26T12:53:14Z
2011-12-27T05:40:29Z
1999
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 20(10), 538-540
0741-3106
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8324
http://hdl.handle.net/10054/8324
 
Language en