Record Details

Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation
 
Creator RAVAL, HN
RAO, VR
 
Subject field-effect transistor
gate
performance
electron
mobility
array of organic field-effect transistor (ofet) sensors
improved sensitivity
ionizing radiation
 
Description Using high-k material in a gate dielectric stack, low-operating-voltage organic semiconducting material sensors for determining total dose radiation are proposed. To improve the stability of organic semiconducting layer in the atmospheric conditions, a thin silicon nitride layer deposited by hot-wire CVD process was used as a passivation layer. Furthermore, in order to achieve higher sensitivity, a parallel connection of organic field-effect transistors (OFETs) is explored in this letter. These sensors are exposed to ionizing radiation using a cobalt-60 radiation source for different total dose values. A three-times improvement in sensitivity was observed in the OFF current with a three-OFET array.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T06:37:40Z
2011-12-26T12:53:17Z
2011-12-27T05:40:34Z
2011-08-01T06:37:40Z
2011-12-26T12:53:17Z
2011-12-27T05:40:34Z
2010
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 31(12), 1482-1484
0741-3106
http://dx.doi.org/10.1109/LED.2010.2074179
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8368
http://hdl.handle.net/10054/8368
 
Language en