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Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics

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Title Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics
 
Creator RAO, VR
SHARMA, DK
VASI, J
 
Subject interface-state generation
silicon dioxide
semiconductor devices
radiation
oxide
sio2
field
nitridation
dependence
injection
 
Description In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses upto 5 Mrad (Si) and for bias fields up to +/-2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2011-08-01T09:41:38Z
2011-12-26T12:53:20Z
2011-12-27T05:40:37Z
2011-08-01T09:41:38Z
2011-12-26T12:53:20Z
2011-12-27T05:40:37Z
1996
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 43(9), 1467-1470
0018-9383
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8394
http://hdl.handle.net/10054/8394
 
Language en