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Further insights into the mechanism of hydrogen-plasma surface passivation of low-dielectric constant hydrogen silsesquioxane (HSQ)

DSpace at IIT Bombay

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Title Further insights into the mechanism of hydrogen-plasma surface passivation of low-dielectric constant hydrogen silsesquioxane (HSQ)
 
Creator SINGH, SK
KUMBHAR, AA
DUSANE, RO
BOCK, W
 
Subject chemical-vapor-deposition
induced damage
films
hydrogen silsesquioxane (hsq)
intermetal dielectric (imd)
ultra-large-scale integration (ulsi)
secondary ion mass spectroscopy (sims)
h-2 plasma
 
Description Hydrogen-plasma-induced surface modification of spin-on hydrogen silsesquioxane (HSQ) thin films has been studied with a view to understand the various physical and chemical aspects of the process. An extensive characterization of the chemical structure, the surface topography and the surface wettability has been carried out. A copper diffusion study has also been done by employing secondary ion mass spectrometry. The results give new insights into the mechanism of the observed decrease in the leakage current of the HSQ films after hydrogen plasma treatment.
 
Publisher KOREAN PHYSICAL SOC
 
Date 2011-08-17T11:22:04Z
2011-12-26T12:55:30Z
2011-12-27T05:40:51Z
2011-08-17T11:22:04Z
2011-12-26T12:55:30Z
2011-12-27T05:40:51Z
2006
 
Type Article
 
Identifier JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 49(3), 1312-1316
0374-4884
http://dspace.library.iitb.ac.in/xmlui/handle/10054/9847
http://hdl.handle.net/10054/9847
 
Language en