Record Details

Non-plasma-based technologies to augment backend processing in future ULSI

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Non-plasma-based technologies to augment backend processing in future ULSI
 
Creator DUSANE, RO
 
Subject hydrogen silsesquioxane hsq
a-sich
deposition
damage
films
cvd
low dielectric constant
hydrogen silsesquioxane (hsq)
dangling bonds
hot-wire-generated atomic hydrogen (hwgah) treatment
barrier layer
 
Description The solution to the problem of increased resistance-capacitance (RC) delay in the present day ULSI is to use porous low-k dielectric films (k = 2.0) along with Copper interconnects. There are a number of issues with Cu/low-k integration, such as Cu diffusion in the porous low-k film, moisture penetration, and damage during backend processing steps like etching and photoresist ashing. Water vapor is introduced into the low-k layer during ashing of the photo resist, which raises the k value to typically above 3. We have successfully addressed all these issues in the case of hydrogen silsesquioxane (HSQ) (k = 2.8) with the help of a non-plasma-based hot-wire-induced chemical-vapor process (HWCVP). With the help of this process, we have also been successful in developing an ultra-thin hydrogenated amorphous silicon-carbon-based barrier layer that completely avoids copper diffusion and shows a higher resistance to electromigration.
 
Publisher KOREAN PHYSICAL SOC
 
Date 2011-08-17T11:23:28Z
2011-12-26T12:55:31Z
2011-12-27T05:40:52Z
2011-08-17T11:23:28Z
2011-12-26T12:55:31Z
2011-12-27T05:40:52Z
2006
 
Type Article
 
Identifier JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 49(3), 1281-1286
0374-4884
http://dspace.library.iitb.ac.in/xmlui/handle/10054/9848
http://hdl.handle.net/10054/9848
 
Language en