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Multiferroic Bi(0.7)Dy(0.3)FeO(3) films as high k dielectric material for advanced non-volatile memory devices

DSpace at IIT Bombay

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Title Multiferroic Bi(0.7)Dy(0.3)FeO(3) films as high k dielectric material for advanced non-volatile memory devices
 
Creator PRASHANTHI, K
DUTTAGUPTA, SP
PINTO, R
PALKAR, VR
 
Description Gate dielectric materials having high dielectric constant, low interface state density and good thermal stability are needed for advanced CMOS applications. In this Letter, the electrical properties of novel multiferroic Bi(0.7)Dy(0.3)FeO(3) (BDFO) thin films deposited using the pulsed laser deposition technique on p-type (100) silicon substrate are reported. Using high frequency capacitance-voltage (C-V) measurements, the dielectric constant, effective oxide charge density and interface state density were estimated. The results suggest the potential application of multiferroic BDFO films as gate dielectric material for novel memory devices that can be electrically written and magnetically read.
 
Publisher INST ENGINEERING TECHNOLOGY-IET
 
Date 2011-08-03T07:40:14Z
2011-12-26T12:54:06Z
2011-12-27T05:41:30Z
2011-08-03T07:40:14Z
2011-12-26T12:54:06Z
2011-12-27T05:41:30Z
2009
 
Type Article
 
Identifier ELECTRONICS LETTERS, 45(16), 821-U27
0013-5194
http://dx.doi.org/10.1049/el.2009.0712
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8949
http://hdl.handle.net/10054/8949
 
Language en