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Structural studies of 20 keV oxygen-implanted silicon

DSpace at IIT Bombay

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Title Structural studies of 20 keV oxygen-implanted silicon
 
Creator GUPTA, GK
YADAV, AD
RAO, TKG
DUBEY, SK
 
Subject chemical-vapor-deposition
electron-spin-resonance
ion-implantation
thin-films
sio2
ellipsometry
sio2-films
ir
ion-implantation
sio2
mos
ftir
esr
c-v
 
Description Silicon wafers were implanted with 20 keV O-2(+) up to total fluence of 1 x 10(18) O-2(+) cm(-2) to synthesize SiO2 layers. The FTIR, ESR and C-V studies of as-implanted samples and samples nitrogen-annealed at 500 degrees C and 800 degrees C are reported. The FTIR spectrum of the as-implanted sample shows absorption bands corresponding to the stretching (1050 cm-L strong), the bending (800 cm(-1), weak) and the rocking (415 cm(-1), weak) modes of SiO2, The peaks shift towards higher wave number on annealing. The ESR signal of the as-implanted sample exhibits an isotropic g-value 2.0028, the line width 3.75 G and the spin density 1.1 x 10(16) cm-2 which disappears on annealing at 800 degrees C. The interface state density distribution as a U-shape and a minimum value of similar to 7-8 x 10(11) cm(-2) eV(-1). (C) 2000 .
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-26T19:47:06Z
2011-12-26T12:55:44Z
2011-12-27T05:42:12Z
2011-07-26T19:47:06Z
2011-12-26T12:55:44Z
2011-12-27T05:42:12Z
2000
 
Type Article
 
Identifier NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 168(4), 503-509
0168-583X
http://dx.doi.org/10.1016/S0168-583X(00)00065-3
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7007
http://hdl.handle.net/10054/7007
 
Language en