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Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer

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Title Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer
 
Creator CHAKRABARTI, S
HALDER, N
SENGUPTA, S
GHOSH, S
MISHIMA, TD
STANLEY, CR
 
Subject inas
temperature
growth
gaas
 
Description The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are grown by molecular beam epitaxy (MBE) at 0.028 ML s(-1) growth rate. The active dots having higher monolayer coverages showed reduced ordering due to local strain at the growth surface. Also the active dots with increased monolayer coverage is a probable cause of tunneling-assisted carrier transfer between the dot layers.
 
Publisher IOP PUBLISHING LTD
 
Date 2011-08-04T02:55:19Z
2011-12-26T12:54:31Z
2011-12-27T05:42:29Z
2011-08-04T02:55:19Z
2011-12-26T12:54:31Z
2011-12-27T05:42:29Z
2008
 
Type Article
 
Identifier NANOTECHNOLOGY, 19(50), -
0957-4484
http://dx.doi.org/10.1088/0957-4484/19/50/505704
http://dspace.library.iitb.ac.in/xmlui/handle/10054/9223
http://hdl.handle.net/10054/9223
 
Language en