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Dielectric properties characterization of La- and Dy-doped BiFeO3 thin films

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Title Dielectric properties characterization of La- and Dy-doped BiFeO3 thin films
 
Creator PETROV, PK
PALKAR, VR
TAGANTSEV, AK
CHIEN, HI
PRASHANTHI, K
AXELSSON, AK
BHATTACHARYA, S
ALFORD, NM
 
Description The dielectric response of La- and Dy- doped BiFeO3 thin films at microwave frequencies (up to 12 GHz) has been monitored as a function of frequency, direct current (dc) electric field, and magnetic field in a temperature range from 25 to 300 degrees C. Both the real and imaginary parts of the response have been found to be non-monotonic (oscillating) functions of measuring frequency. These oscillations are not particularly sensitive to a dc electric field; however, they are substantially dampened by a magnetic field. The same effect has been observed when the volume of the characterized sample is increased. This phenomenon is attributed to the presence of a limited number of structural features with a resonance type response. The exact origin of these features is unknown at present. Leakage current investigations were performed on the whole set of films. The films were highly resistive with low leakage current, thereby giving us confidence in the microwave measurements. These typically revealed 'N'-type I-V characteristics.
 
Publisher MATERIALS RESEARCH SOC
 
Date 2011-08-18T15:17:46Z
2011-12-26T12:55:48Z
2011-12-27T05:42:40Z
2011-08-18T15:17:46Z
2011-12-26T12:55:48Z
2011-12-27T05:42:40Z
2007
 
Type Article
 
Identifier JOURNAL OF MATERIALS RESEARCH, 22(8), 2179-2184
0884-2914
http://dx.doi.org/10.1557/jmr.2007.0287
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10056
http://hdl.handle.net/10054/10056
 
Language en