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Optimum Body Bias Constraints for Leakage Reduction in High-k Complementary Metal-Oxide-Semiconductor Circuits

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Title Optimum Body Bias Constraints for Leakage Reduction in High-k Complementary Metal-Oxide-Semiconductor Circuits
 
Creator CHAWDA, PK
ANAND, B
RAO, VR
 
Description A significantly increased subthreshold leakage is observed in devices with high-k gate dielectric due to gate fringing field effects. Further, the drain to body band-to-band tunnelling leakage (BTBT) current also increases with the value of dielectric constant (k), particularly for high-k p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs). We show that this increase with k is due to a gate-to-drain fringing field induced increase in the local electric field, across the gate overlap region of drain junction. Due to these reasons, the circuit technique of applying an optimum body bias to minimize the total leakage, is least effective in high-k p-MOSFETs. Our results also show that, because of the degraded subthreshold characteristics in high-k MOSFETs, the effectiveness of body bias in controlling the gate leakage is further reduced for scaled CMOS technologies employing high-k gate dielectric. (C) 2009
 
Publisher JAPAN SOC APPLIED PHYSICS
 
Date 2011-08-04T08:32:28Z
2011-12-26T12:54:38Z
2011-12-27T05:42:45Z
2011-08-04T08:32:28Z
2011-12-26T12:54:38Z
2011-12-27T05:42:45Z
2009
 
Type Article
 
Identifier JAPANESE JOURNAL OF APPLIED PHYSICS, 48(5), -
0021-4922
http://dx.doi.org/10.1143/JJAP.48.054501
http://dspace.library.iitb.ac.in/xmlui/handle/10054/9300
http://hdl.handle.net/10054/9300
 
Language en