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An attempt to replace an anion in CMR oxide: Nitrogen implantation in La0.75Ca0.25MnO3

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Title An attempt to replace an anion in CMR oxide: Nitrogen implantation in La0.75Ca0.25MnO3
 
Creator LANKE, UD
 
Subject insulator-metal transition
giant magnetoresistance
films
la1-xsrxmno3
resistivity
cmr
oriented
laser ablation
ion implantation
 
Description Highly oriented La0.75Ca0.25MnO3 (LCMO) films have been deposited by pulsed excimer laser ablation technique on (0 0 1) LaAlO3 substrates. These films were implanted with 100 keV nitrogen ions at a dose of 5 x 10(16) ions/cm(2). The implanted films were then annealed at an elevated temperature for 10 h in nitrogen ambient. It is seen that high-dose nitrogen implantation-annealing leads to an increase in the resistivity value over the entire temperature range and reduction in Colossal Magnetoresistance (CMR) peak value. Interestingly, I am getting an additional peak in the resistance as well as CMR versus temperature curves at 140 and 120 K, respectively. The main objective of this work was to synthesize the nitride phase of LCMO compound by the ion-beam technique. The samples were characterized using the X-ray diffraction (XRD) technique and resistance versus temperature measurements with and without magnetic field. (C) 1999 .
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-24T08:49:37Z
2011-12-26T12:48:32Z
2011-12-27T05:43:27Z
2011-07-24T08:49:37Z
2011-12-26T12:48:32Z
2011-12-27T05:43:27Z
1999
 
Type Article
 
Identifier NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 155(1-2), 85-90
0168-583X
http://dx.doi.org/10.1016/S0168-583X(99)00238-4
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6374
http://hdl.handle.net/10054/6374
 
Language en