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Effect of filament temperature on HWCVD deposited a-SiC : H

DSpace at IIT Bombay

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Title Effect of filament temperature on HWCVD deposited a-SiC : H
 
Creator SWAIN, BP
DUSANE, RO
 
Subject silicon carbon alloys
thin-film
infrared-absorption
solar-cells
spectroscopy
cvd
a-sic : h
ftir
raman
hot-wire chemical vapor deposition (hwcvd)
 
Description The filament temperature (T-F) is determined to be a critical parameter for the deposition of HWCVD deposited a-SiC:H films. More carbon atoms are incorporated into the films in the favorable configurations and enhance the optical gap of the films. The changes in deposition rate, carbon content, optical gap and IR absorption of Si-C and C-H-n are demonstrated for a-SiC: H alloy films deposited with filament temperature ranging from 1650 to 2100 degrees C. The films were evaluated by absorption measurements in the visible region, Fourier-transform infrared spectroscopic measurements (FTIR), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy (RS) measurements. (c) 2005
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-24T20:15:24Z
2011-12-26T12:48:03Z
2011-12-27T05:43:42Z
2011-07-24T20:15:24Z
2011-12-26T12:48:03Z
2011-12-27T05:43:42Z
2006
 
Type Article
 
Identifier MATERIALS LETTERS, 60(24), 2915-2919
0167-577X
http://dx.doi.org/10.1016/j.matlet.2005.10.050
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6529
http://hdl.handle.net/10054/6529
 
Language en