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Surface modification by the potential delay technique to obtain a photoactive PbO film

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Title Surface modification by the potential delay technique to obtain a photoactive PbO film
 
Creator MUKHOPADHYAY, I
GHOSH, S
SHARON, M
 
Subject sulfuric-acid
electrode
oxide
anodic oxide of pb
delay sweep method
nan-stoichiometric pbo
oxide thin films
pbo photoanode
photoactive pbo
semiconductor oxide
surface modification technique
 
Description Non-stoichiometric alpha-PbO has been found to be a photoactive semiconducting oxide, where its photoactivity depends on the composition. A new electrosynthetic procedure was applied to obtain a surface modified photoactive PbO film. Typical results show that the resulting oxide phase is n-type with oxide ion vacancies. The photoresponse of the oxide film was studied using photoelectrochemical measurements. (C) 1997
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-26T21:49:35Z
2011-12-26T12:55:59Z
2011-12-27T05:43:49Z
2011-07-26T21:49:35Z
2011-12-26T12:55:59Z
2011-12-27T05:43:49Z
1997
 
Type Article
 
Identifier SURFACE SCIENCE, 384(1-3), 234-239
0039-6028
http://dx.doi.org/10.1016/S0039-6028(97)80226-9
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7029
http://hdl.handle.net/10054/7029
 
Language en