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Phase-change annealing effects on electrical and optical properties of tin oxide thin films

DSpace at IIT Bombay

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Title Phase-change annealing effects on electrical and optical properties of tin oxide thin films
 
Creator SRINIVASAN, VSS
PATRA, MK
CHOUDHARY, VS
MATHEW, M
PANDYA, A
 
Subject high-pressure
sno2
electron-beam evaporation
thin films
annealing
tin oxide
orthorhombic
phase change
atomic force microscopy
activation energy
 
Description The change from tetragonal to orthorhombic phase due to annealing also changes the electrical and optical properties of tin oxide thin films. X-ray diffraction and Atomic force microscopy studies reveal the changes in the phase and grain merger with annealing of as-grown tin oxide thin films. Optical bandgap increase with annealing confirms the improvement in the quality of film transparency. Electrical conductivity also shows an increasing trend with annealing. Parameters such as activation energy, optical bandgap, average roughness, and extinction coefficient have been determined and interpreted with respect to annealing.
 
Publisher NATL INST OPTOELECTRONICS
 
Date 2011-08-19T02:44:50Z
2011-12-26T12:56:01Z
2011-12-27T05:43:59Z
2011-08-19T02:44:50Z
2011-12-26T12:56:01Z
2011-12-27T05:43:59Z
2010
 
Type Article
 
Identifier JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 12(7), 1485-1489
1454-4164
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10198
http://hdl.handle.net/10054/10198
 
Language en