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A comprehensive model for PMOS NBTI degradation: Recent progress

DSpace at IIT Bombay

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Title A comprehensive model for PMOS NBTI degradation: Recent progress
 
Creator ALAM, MA
KUFLUOGLU, H
VARGHESE, D
MAHAPATRA, S
 
Subject bias temperature instability
trap generation
physical-mechanisms
mos-transistors
interface
silicon
mosfets
recovery
stress
impact
 
Description Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBT1 degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction-Diffusion model in a particularly simple form, we show that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism. (c) 2006
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-23T05:05:12Z
2011-12-26T12:56:18Z
2011-12-27T05:44:46Z
2011-08-23T05:05:12Z
2011-12-26T12:56:18Z
2011-12-27T05:44:46Z
2007
 
Type Article
 
Identifier MICROELECTRONICS RELIABILITY, 47(6), 853-862
0026-2714
http://dx.doi.org/10.1016/j.microrel.2006.10.012
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10399
http://hdl.handle.net/10054/10399
 
Language en