Record Details

A comprehensive model of PMOS NBTI degradation

DSpace at IIT Bombay

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Field Value
 
Title A comprehensive model of PMOS NBTI degradation
 
Creator ALAM, MA
MAHAPATRA, S
 
Subject bias-temperature-instability
si-sio2 interface
silicon
diffusion
mechanism
stress
 
Description Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction-diffusion model. We demonstrate how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction-diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (C) 2004 Elsevier Ltd.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-23T05:08:00Z
2011-12-26T12:56:18Z
2011-12-27T05:44:47Z
2011-08-23T05:08:00Z
2011-12-26T12:56:18Z
2011-12-27T05:44:47Z
2005
 
Type Article
 
Identifier MICROELECTRONICS RELIABILITY, 45(1), 71-81
0026-2714
http://dx.doi.org/10.1016/j.microrel.2004.03.019
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10400
http://hdl.handle.net/10054/10400
 
Language en