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A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages

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Title A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages
 
Creator ANIL, KG
MAHAPATRA, S
EISELE, I
 
Subject electron-electron interaction
mosfets
silicon
mosfet
hot-carrier
impact ionization
monte-carlo simulation
electron energy distribution
thermal tail
electron-electron interactions
 
Description A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFET) for drain voltages close to and below the bandgap voltage is presented. The data is analyzed based on recent full-band Monte-Carlo results available in the literature. It is shown that the broadening of the tail of the electron energy distribution (EED) by electron-electron interactions (EEI) has an observable impact on hot-electron effects of n-MOSFETs of gate length of even 5 mum. Impacts of channel length scaling and gate voltage on the broadening of EED tail by EEI are also examined, and a model to explain the observed dependencies has been proposed. (C) 2003 . .
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-23T05:26:17Z
2011-12-26T12:56:18Z
2011-12-27T05:44:47Z
2011-08-23T05:26:17Z
2011-12-26T12:56:18Z
2011-12-27T05:44:47Z
2003
 
Type Article
 
Identifier SOLID-STATE ELECTRONICS, 47(6), 995-1001
0038-1101
http://dx.doi.org/10.1016/S0038-1101(02)00458-6
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10405
http://hdl.handle.net/10054/10405
 
Language en