Record Details

A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique
 
Creator MAHAPATRA, S
RAO, VR
VASI, J
CHENG, B
WOO, JCS
 
Subject ldd n-mosfets
spatial distributions
oxide
degradation
state
nmosfets
model
mosfets
lateral asymmetric channel
hot-carrier effect
charge pumping
 
Description The spatial distribution of interface traps in hot-carrier stressed lateral asymmetric channel (LAC) and conventional (CON) MOSFETs have been determined using a novel charge pumping technique. Detailed post-stress interface characterization shows reduced interface-trap buildup and lesser drain current degradation in LAC MOSFETs compared to the CON device, for stressing at different times and drain biases and for all channel lengths down to 100 mn. The interface-trap profile parameters (peak magnitude and spread) have been correlated to drain current degradation as function of stress drain bias and time. It is shown that with increased stress drain bias and time, both the peak and spread of the interface-trap profiles increase, but at different rates. While the peaks evolve identically for CON and LAC MOSFET's, the spreads do not, which is shown to affect the rate of the resulting transconductance degradation differently. Device simulations show a lower peak lateral electric field in LAC MOSFETs compared to CON devices, which is responsible for the observed reduction in hot-carrier degradation in such devices. (C) 2001 . .
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-23T09:54:38Z
2011-12-26T12:56:24Z
2011-12-27T05:45:07Z
2011-08-23T09:54:38Z
2011-12-26T12:56:24Z
2011-12-27T05:45:07Z
2001
 
Type Article
 
Identifier SOLID-STATE ELECTRONICS, 45(10), 1717-1723
0038-1101
http://dx.doi.org/10.1016/S0038-1101(01)00222-2
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10479
http://hdl.handle.net/10054/10479
 
Language en