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COMPUTATIONAL MODELING OF NANOSTRUCTURED POROUS SILICON

DSpace at IIT Bombay

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Field Value
 
Title COMPUTATIONAL MODELING OF NANOSTRUCTURED POROUS SILICON
 
Creator VADJIKAR, RM
CHANDORKAR, AN
SHARMA, D
VENKATACHALAM, S
 
Subject diffusion-limited aggregation
luminescence
growth
 
Description The finite diffusion length model generates patterns which are similar to the nanostructural features in porous silicon formed by electrochemical anodizing. The simulated patterns have a neatly constant density away from the interface regions. The variation of number of particles with distance is linear on a double log plot, in the regions away from interfaces. We report that the estimation of the width of the active region between the porous and the bulk lattice can be made by observing the transition from a region of constant slope to a region of zero dope on the log-log plot of number of aggregating particles versus distance.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-23T20:28:15Z
2011-12-26T12:56:35Z
2011-12-27T05:45:32Z
2011-08-23T20:28:15Z
2011-12-26T12:56:35Z
2011-12-27T05:45:32Z
1995
 
Type Article
 
Identifier NANOSTRUCTURED MATERIALS, 5(1), 87-94
0965-9773
http://dx.doi.org/10.1016/0965-9773(95)00004-X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10633
http://hdl.handle.net/10054/10633
 
Language en