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Reactively sputtered GaAsxN1-x thin films

DSpace at IIT Bombay

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Field Value
 
Title Reactively sputtered GaAsxN1-x thin films
 
Creator YADAV, BRAJESH S
MAJOR, SS
SRINIVASA, RS
 
Subject sputtering
thin films
structure
optical properties
 
Description Thin films of GaAsxN1−x alloys were deposited by reactive rf magnetron sputtering of GaAs target with a mixture of argon and nitrogen as the sputtering gas. Growth rate was found to decrease from ~ 7 μm/h to ~ 2 μm/h as the nitrogen content increased from 0% to 40%. XRD and TEM studies of the films reveal the presence of hexagonal GaN with a significant increase of the lattice parameters in a narrow range of composition of the sputtering gas (5–10% nitrogen), which is attributed to the incorporation of arsenic. The limited availability of nitrogen in the sputtering atmosphere is found to encourage the incorporation of arsenic in the alloy films. Optical absorption coefficient spectra of the films were obtained from reflection and transmission data. The effect of arsenic incorporation is seen in the optical absorption spectra of the films, which show a continuous shift of the absorption edge to lower energies with respect to that of gallium nitride.
 
Publisher Elsevier
 
Date 2009-04-24T09:13:01Z
2011-12-08T06:27:56Z
2011-12-26T13:01:37Z
2011-12-27T05:45:38Z
2009-04-24T09:13:01Z
2011-12-08T06:27:56Z
2011-12-26T13:01:37Z
2011-12-27T05:45:38Z
2006
 
Type Article
 
Identifier Thin Solid Films 515(3), 1043-1046
0040-6090
10.1016/j.tsf.2006.07.062
http://hdl.handle.net/10054/1234
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1234
 
Language en