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Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

DSpace at IIT Bombay

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Field Value
 
Title Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target
 
Creator YADAV, BRAJESH S
SINGH, SUKHVINDER
GANGULI, TAPAS
RAVI KUMAR
MAJOR, SS
SRINIVASA, RS
 
Subject gallium nitride
reactive sputtering
nanocrystalline alloys
atomic spectroscopy
x-ray diffraction
 
Description Polycrystalline GaN films were deposited on quartz and ZnO buffer layers over quartz by reactive sputtering of a GaAs target in 100% nitrogen at 550 °C and 700 °C. Micro-structural investigations of the films were carried out using high resolution X-ray diffraction, atomic force microscopy and Raman spectroscopy. GaN films deposited on ZnO buffer layers exhibit strongly preferred (0002) orientation of crystallites. In particular, the film deposited at 700 °C on ZnO buffer layer over amorphous quartz substrate showed large crystallite size, both along and perpendicular to growth direction, strong and nearly complete c-axis orientation of crystallites with tilt of ~ 2.5° and low value of micro-strain ~ 2 × 10− 3. The significant improvement in crystallinity and orientation of crystallites in the GaN film is attributed to the presence of the ZnO buffer layer on quartz substrate and its small lattice mismatch (1.8%) with GaN.
 
Publisher Elsevier
 
Date 2009-04-24T09:13:45Z
2011-12-08T06:28:56Z
2011-12-26T13:01:38Z
2011-12-27T05:45:40Z
2009-04-24T09:13:45Z
2011-12-08T06:28:56Z
2011-12-26T13:01:38Z
2011-12-27T05:45:40Z
2008
 
Type Article
 
Identifier Thin Solid Films 517(2), 488-493
0040-6090
10.1016/j.tsf.2008.06.085
http://hdl.handle.net/10054/1236
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1236
 
Language en