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Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices

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Title Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices
 
Creator RAJESH, KR
VARGHESE, S
MENON, CS
 
Subject photo-voltaic cells
copper phthalocyanine
photovoltaic cells
thin-films
diodes
temperature
dependence
injection
barrier
ito
semiconductors
thin films
vapor deposition
electrical properties
transport properties
 
Description A Schottky structure is fabricated using CuPc sandwiched between fluorinated tin oxide (FTO) and aluminium electrodes. The electrical properties of the device are measured at room temperature. Permittivity of the device is calculated from capacitance measurements. The saturation current density, J(0) = 5.1 X 10(-4) (Amp/m(2)), diode ideality factor, n = 3.02 and barrier height, (P = 0.84 eV are determined for the Schottky juction. Reverse bias In J versus In V-1/2 is interpreted in terms of Schottky emission. Solar cell parameters are determined from the J V characteristics. Power conversion efficiency, eta of 0.0024% is obtained for the cell. Band gap energy of the material is determined from UV-visible absorption spectrum. (c) 2007
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-24T01:09:51Z
2011-12-26T12:56:41Z
2011-12-27T05:45:44Z
2011-08-24T01:09:51Z
2011-12-26T12:56:41Z
2011-12-27T05:45:44Z
2007
 
Type Article
 
Identifier JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 68(4), 556-560
0022-3697
http://dx.doi.org/10.1016/j.jpcs.2007.01.023
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10710
http://hdl.handle.net/10054/10710
 
Language en