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Dissociation kinetics of molecular hydrogen in a microwave plasma and its influence on the hydrogen content in diamond films

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Title Dissociation kinetics of molecular hydrogen in a microwave plasma and its influence on the hydrogen content in diamond films
 
Creator SHARDA, T
MISRA, DS
AVASTHI, DK
MEHTA, GK
 
Subject chemical vapor-deposition
raman
cvd
thin films
crystal growth
 
Description Double probe measurements were performed in a microwave plasma at various hydrogen pressures. Electron temperature increases with the growth pressure. Electron density is determined to be 5.6, 7.2 and 8 x 10(11) cm(-3) within 20% accuracy, at 20, 40 and 70 Torr, respectively. The dissociation rate of hydrogen increases with pressure. Elastic recoil detection analysis was used to measure the relative H concentration in the films. The stress in the films changes systematically as the H content increases. We find that as 1 h H atom concentration in the plasma increases, the concentration of H in the films goes down. Copyright (C) 1996
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-24T02:39:46Z
2011-12-26T12:56:42Z
2011-12-27T05:45:51Z
2011-08-24T02:39:46Z
2011-12-26T12:56:42Z
2011-12-27T05:45:51Z
1996
 
Type Article
 
Identifier SOLID STATE COMMUNICATIONS, 98(10), 879-883
0038-1098
http://dx.doi.org/10.1016/0038-1098(96)00040-3
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10731
http://hdl.handle.net/10054/10731
 
Language en