Dissociation kinetics of molecular hydrogen in a microwave plasma and its influence on the hydrogen content in diamond films
DSpace at IIT Bombay
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Title |
Dissociation kinetics of molecular hydrogen in a microwave plasma and its influence on the hydrogen content in diamond films
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Creator |
SHARDA, T
MISRA, DS AVASTHI, DK MEHTA, GK |
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Subject |
chemical vapor-deposition
raman cvd thin films crystal growth |
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Description |
Double probe measurements were performed in a microwave plasma at various hydrogen pressures. Electron temperature increases with the growth pressure. Electron density is determined to be 5.6, 7.2 and 8 x 10(11) cm(-3) within 20% accuracy, at 20, 40 and 70 Torr, respectively. The dissociation rate of hydrogen increases with pressure. Elastic recoil detection analysis was used to measure the relative H concentration in the films. The stress in the films changes systematically as the H content increases. We find that as 1 h H atom concentration in the plasma increases, the concentration of H in the films goes down. Copyright (C) 1996
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Publisher |
PERGAMON-ELSEVIER SCIENCE LTD
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Date |
2011-08-24T02:39:46Z
2011-12-26T12:56:42Z 2011-12-27T05:45:51Z 2011-08-24T02:39:46Z 2011-12-26T12:56:42Z 2011-12-27T05:45:51Z 1996 |
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Type |
Article
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Identifier |
SOLID STATE COMMUNICATIONS, 98(10), 879-883
0038-1098 http://dx.doi.org/10.1016/0038-1098(96)00040-3 http://dspace.library.iitb.ac.in/xmlui/handle/10054/10731 http://hdl.handle.net/10054/10731 |
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Language |
en
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