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IONIC PENETRATION INTO REOXIDIZED NITRIDED OXIDES IN ELECTROLYTE-OXIDE-SEMICONDUCTOR STRUCTURES

DSpace at IIT Bombay

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Title IONIC PENETRATION INTO REOXIDIZED NITRIDED OXIDES IN ELECTROLYTE-OXIDE-SEMICONDUCTOR STRUCTURES
 
Creator TOPKAR, A
LAL, R
 
Subject field-effect transistors
silicon dioxide films
thin-films
generation
radiation
hydrogen
devices
isfets
insulators
metal-oxide semiconductor structure
sensors
silicon oxide
 
Description To identify mechanisms affecting the stability of ion-sensitive field effect transistors (ISFETs) we investigated the penetration of water and ions into reoxidized nitrided oxide (RNO) which is known to have a higher resistance than silicon dioxide to the diffusion of impurities such as H2O, H+ and OH-. Electrolyte-oxide-semiconductor (EOS) structures with reoxidized nitrided oxide as dielectric were biased with different voltages. Metal-oxide-semiconductor capacitors were then fabricated incorporating these oxides. The charge trapping and the interface state generation susceptibility of reoxidized nitrided oxide after avalanche electron injection were compared for different capacitors. The increase in electron trapping observed for capacitors having reoxidized nitrided oxide exposed to acidic solution and stressed with negative bias to silicon is attributed to penetration of protons. This indicates that proton penetration and drift of protons into the insulator of the ISFET could lead to instability problems.
 
Publisher ELSEVIER SCIENCE SA LAUSANNE
 
Date 2011-07-29T08:50:05Z
2011-12-26T12:48:35Z
2011-12-27T05:46:03Z
2011-07-29T08:50:05Z
2011-12-26T12:48:35Z
2011-12-27T05:46:03Z
1995
 
Type Article
 
Identifier THIN SOLID FILMS, 259(2), 259-263
0040-6090
http://dx.doi.org/10.1016/0040-6090(94)06437-7
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7655
http://hdl.handle.net/10054/7655
 
Language en