FAULT TOLERANCE IN N-MOS RANDOM-ACCESS MEMORIES WITH DYNAMIC REDUNDANCY METHODS
DSpace at IIT Bombay
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Title |
FAULT TOLERANCE IN N-MOS RANDOM-ACCESS MEMORIES WITH DYNAMIC REDUNDANCY METHODS
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Creator |
NAIDU, RV
MAHAPATRA, S |
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Publisher |
PERGAMON-ELSEVIER SCIENCE LTD
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Date |
2011-08-24T09:37:03Z
2011-12-26T12:56:50Z 2011-12-27T05:46:09Z 2011-08-24T09:37:03Z 2011-12-26T12:56:50Z 2011-12-27T05:46:09Z 1988 |
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Type |
Article
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Identifier |
MICROELECTRONICS AND RELIABILITY, 28(2), 193-200
0026-2714 http://dx.doi.org/10.1016/0026-2714(88)90350-2 http://dspace.library.iitb.ac.in/xmlui/handle/10054/10838 http://hdl.handle.net/10054/10838 |
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Language |
en
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