Record Details

Formation and growth of porous silicon

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Formation and growth of porous silicon
 
Creator VADJIKAR, RM
NATH, AK
CHANDORKAR, AN
 
Subject diffusion-limited aggregation
computer-simulations
model
 
Description The conformal hullfinite diffusion length model (FDL) simulates pore formation and growth in silicon by launching particles from an isoconcentration profile. Several features of the aggregation patterns generated by this model resemble experimentally observed morphology of porous silicon. In this paper we consider silicon atom dissolution by a two particle aggregation algorithm. The probabilities of site occupation have been assigned based on the local electric field. The release probability of particles has been considered to be proportional to the electric field. The incorporation of these factors generates aggregation patterns which are similar to those generated by other similar models. We suggest that such modifications generate aggregation patterns that are representative of porous silicon morphology. (C) 1997 Acta Metallurgica Inc.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-24T11:05:34Z
2011-12-26T12:56:52Z
2011-12-27T05:46:18Z
2011-08-24T11:05:34Z
2011-12-26T12:56:52Z
2011-12-27T05:46:18Z
1997
 
Type Article
 
Identifier NANOSTRUCTURED MATERIALS, 8(4), 507-520
0965-9773
http://dx.doi.org/10.1016/S0965-9773(97)00190-6
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10863
http://hdl.handle.net/10054/10863
 
Language en