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High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy

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Title High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy
 
Creator MISHRA, JK
DHAR, S
BRANDT, O
 
Subject fermi-surface
copper
semiconductors
epitaxy
points defects
photoconductivity and photovoltaics
 
Description Using X-ray diffraction, photoconductivity and temperature dependent conductivity measurements, we investigate GaN:Gd layers grown by reactive molecular-beam epitaxy with the Gd concentration ranging from 7 x 10(15) to 8.5 x 10(18) cm(-3). Our study reveals that the incorporation of Gd produces a large concentration of defects in the GaN lattice. The density of these defects generated even with a Gd concentration as low as 7 x 10(15) cm(-3) is estimated to be as high as approximate to 10(19) cm(-3). The defect state is found to be located approximate to 450 meV away from the band edge.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-25T06:31:08Z
2011-12-26T12:56:57Z
2011-12-27T05:46:31Z
2011-08-25T06:31:08Z
2011-12-26T12:56:57Z
2011-12-27T05:46:31Z
2010
 
Type Article
 
Identifier SOLID STATE COMMUNICATIONS, 150(47-48), 2370-2373
0038-1098
http://dx.doi.org/10.1016/j.ssc.2010.09.044
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10922
http://hdl.handle.net/10054/10922
 
Language en