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INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES

DSpace at IIT Bombay

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Field Value
 
Title INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES
 
Creator PATRIKAR, RM
LAL, R
VASI, J
 
Subject reoxidized nitrided oxides
silicon dioxide
trapped holes
radiation
degradation
capacitors
sio2
 
Description The results of high-field stressing experiments for dry oxides, pyrogenic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogenic oxides are presented in this paper. Pyrogenic oxides show poor high-field properties, but nitridation and reoxidation improves them considerably. In fact, the high-field performance of reoxidized nitrided pyrogenic oxides is even superior to that of dry oxides. Our results indicate that improvement occurs due to inhibition of hydrogen drift.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-25T09:12:42Z
2011-12-26T12:57:00Z
2011-12-27T05:46:41Z
2011-08-25T09:12:42Z
2011-12-26T12:57:00Z
2011-12-27T05:46:41Z
1995
 
Type Article
 
Identifier SOLID-STATE ELECTRONICS, 38(2), 477-480
0038-1101
http://dx.doi.org/10.1016/0038-1101(94)00089-X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10965
http://hdl.handle.net/10054/10965
 
Language en