Record Details

Electronic structure of highly crystalline polyaniline by study of tunneling conduction in n(+)-Si/self-assembled monolayer/polyaniline heterostructures

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Electronic structure of highly crystalline polyaniline by study of tunneling conduction in n(+)-Si/self-assembled monolayer/polyaniline heterostructures
 
Creator SUTAR, DS
LENFANT, S
VUILLAUME, D
YAKHMI, P
 
Subject thin-film transistors
self-assembled monolayers
interface
polymer
devices
base
pani
self-assembly
mis
c-afm
tunneling
electronic structure
 
Description Highly crystalline polyaniline (PANI) films were deposited on degenerated silicon (n(+)-Si) substrates covered with its native oxide (SiO(2)), surface modified with amino-silane self-assembled monolayers (SAM). Scanning electron microscopy studies reveal formation of single crystal domains scattered all over the surface of film. Height and current images obtained using current-sensing AFM (C-AFM) exhibit pyramidal topography of crystallites, and inhomogeneous conductivity. As the native oxide and SAM acts as a very thin insulating layer (
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-24T23:11:03Z
2011-12-26T12:48:36Z
2011-12-27T05:46:47Z
2011-07-24T23:11:03Z
2011-12-26T12:48:36Z
2011-12-27T05:46:47Z
2008
 
Type Article
 
Identifier ORGANIC ELECTRONICS, 9(5), 602-608
1566-1199
http://dx.doi.org/10.1016/j.orgel.2008.04.007
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6566
http://hdl.handle.net/10054/6566
 
Language en