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Parameter window of diamond growth on GaN films by microwave plasma chemical vapor deposition

DSpace at IIT Bombay

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Title Parameter window of diamond growth on GaN films by microwave plasma chemical vapor deposition
 
Creator MOHAPATRA, DIPTI R
RAI, PADMNABH
MISRA, ABHA
TYAGI, PK
YADAV, BRAJESH S
MISRA, DS
 
Subject windows
vapors
substrates
scanning
 
Description We report here, a detailed study of the parameter window of the deposition pressures to grow the diamond films on GaN coated quartz substrates using microwave plasma deposition technique. Hexagonal GaN films of 5 µm coated on quartz are used as substrates for diamond deposition in the pressure range of 80–140 Torr, using microwave plasma chemical vapor deposition (MPCVD) technique. The diamond films are characterized by scanning electron microscopy, XRD, photoluminescence and Raman spectroscopy. Scanning electron microscope image shows that the nucleation density of the films is high and we can deposit a continuous film for a deposition time ranging for 6–8 h. Oriented growth of diamond has been observed at higher pressure.
 
Publisher Elsevier
 
Date 2009-04-28T05:27:21Z
2011-12-08T06:46:00Z
2011-12-26T13:01:47Z
2011-12-27T05:46:53Z
2009-04-28T05:27:21Z
2011-12-08T06:46:00Z
2011-12-26T13:01:47Z
2011-12-27T05:46:53Z
2008
 
Type Article
 
Identifier Diamond and Related Materials 17(7-10), 1775-1779
0925-9635
10.1016/j.diamond.2008.02.011
http://hdl.handle.net/10054/1272
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1272
 
Language en