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Morphology and resistivity of Al thin films grown on Si(111) by molecular beam epitaxy

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Title Morphology and resistivity of Al thin films grown on Si(111) by molecular beam epitaxy
 
Creator JOSHI, N
DEBNATH, AK
ASWAL, DK
MUTHE, KP
KUMAR, MS
GUPTA, SK
YAKHMI, JV
 
Subject aluminum
metallization
surface
si
al thin films
molecular beam epitaxy
xps
afm
metal-to-insulator transition
 
Description Thin films of aluminium metal with varying thickness between 10 and 200nm were grown on (I 1 1) Si substrates at 250 degrees C under UHV conditions using molecular beam epitaxy (MBE). Grown thin films were characterized by in situ Xray photoelectron spectroscopy, and ex situ X-ray diffraction, atomic force microscopy and temperature-dependent electrical resisitivity measurements. The results showed that (i) films grow via 3D-island Volmer-Weber growth mechanism, (ii) with increasing film thickness the average grain size increases and the coalescence takes place for thickness > 60 nm, and (iii) independent of the thickness, films grow with (111) orientation. The room-temperature value of resistivity contrary to the predictions of existing theoretical models is found to increase monotonically up to a thickness of 40 nm. This anomalous feature was understood in terms of the film morphology, whereby charge transport takes place via variable range hopping (VRH). For film thickness = 60 mn the resistivity decreased sharply and the M-I transition disappeared. The bulk value of resistivity (2.59 mu Omega cm) was obtained for thickness > 200 urn. (c) 2005
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-25T15:16:35Z
2011-12-26T12:57:07Z
2011-12-27T05:46:55Z
2011-08-25T15:16:35Z
2011-12-26T12:57:07Z
2011-12-27T05:46:55Z
2005
 
Type Article
 
Identifier VACUUM, 79(3-4), 178-185
0042-207X
http://dx.doi.org/10.1016/j.vacuum.2005.03.007
http://dspace.library.iitb.ac.in/xmlui/handle/10054/11058
http://hdl.handle.net/10054/11058
 
Language en