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NCDP-plated CdSe film: Growth and characterization

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Field Value
 
Title NCDP-plated CdSe film: Growth and characterization
 
Creator KUMAR, M
SHARAN, MK
SHARON, M
 
Subject solar-cells
electrodes
chalcogenides
semiconductors
thin films
chemical synthesis
 
Description Polycrystalline thin films of n-type CdSe (thickness 1-2 mu m) were grown on Zn substrates by noncatalytic displacement plating using aqueous solutions of CdSO4 and SeO2 in acidic pH. Thickness measurement nias performed by the chemical stripping method as well as by the capacitance method. The electrical characterization comprises ohmic contact study, resistivity, conductivity, and impedance measurements. The optical characterization was determined by photocurrent action spectrum and visible reflectance spectrum studies. Crystallographic structure and surface morphology were analyzed by X-ray diffraction and scanning electron microscopy. Average grain size of the order of micrometers and well-defined grain boundaries were observed. (C) 1998 .
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-25T15:54:32Z
2011-12-26T12:57:07Z
2011-12-27T05:46:56Z
2011-08-25T15:54:32Z
2011-12-26T12:57:07Z
2011-12-27T05:46:56Z
1998
 
Type Article
 
Identifier MATERIALS RESEARCH BULLETIN, 33(1), 161-169
0025-5408
http://dx.doi.org/10.1016/S0025-5408(97)00187-6
http://dspace.library.iitb.ac.in/xmlui/handle/10054/11066
http://hdl.handle.net/10054/11066
 
Language en