Record Details

Resistance blow-up effect in micro-circuit engineering

DSpace at IIT Bombay

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Title Resistance blow-up effect in micro-circuit engineering
 
Creator TAN, MLP
SAXENA, T
ARORA, V
 
Subject low-dimensional nanostructures
saturation velocity
drift velocity
mobility degradation
ballistic transport
nanoscale mosfets
compact model
diffusion
i-v characteristics
resistance blow up
power degradation
nonohmic current
saturation
voltage division
current division
micro circuits
rc time constants
 
Description The nonlinearity in the I-V characteristics of a scaled-down micro/nano-scale resistive channel is shown to elevate the DC and signal resistance as current approaches its saturation value The deviation from traditional circuit engineering takes place when the applied voltage is increased beyond the critical voltage V(c) = (V(t)/l)L where V(r) is the thermal voltage l is the ohmic mean free path and L is the length of the conducting channel This resistance blow up is more pronounced for a smaller-length resistor in a micro-circuit of two resistors with same ohmic value The power consumed P = VI not only is lower but also is a linear function of voltage Vas compared to the quadratic rise with V in the ohmic regime The resistance blow up effect also gives enhanced RC time constant for transients when a digital signal switches from low to high or vice versa These results are of immense value to circuit designers and those doing device characterization to extract parasitic and transport parameters (C) 2010 Elsevier Ltd
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2011-08-26T07:37:37Z
2011-12-26T12:57:21Z
2011-12-27T05:47:28Z
2011-08-26T07:37:37Z
2011-12-26T12:57:21Z
2011-12-27T05:47:28Z
2010
 
Type Article
 
Identifier SOLID-STATE ELECTRONICS, 54(12), 1617-1624
0038-1101
http://dx.doi.org/10.1016/j.sse.2010.06.024
http://dspace.library.iitb.ac.in/xmlui/handle/10054/11241
http://hdl.handle.net/10054/11241
 
Language en