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Effect of substrate temperature on HWCVD deposited a-SiC : H film

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Field Value
 
Title Effect of substrate temperature on HWCVD deposited a-SiC : H film
 
Creator SWAIN, BP
DUSANE, RO
 
Subject chemical-vapor-deposition
hot-wire cvd
amorphous-silicon
dilution
a-sic : h
hwcvd
ftir
raman
photoluminescence
 
Description Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH4 and C2H2 without hydrogen dilution by hot wire chemical vapor deposition (HWCVD) technique. The photoluminescence, optical, and structural properties of these films were systematically studied as a function of substrate temperature (T-s). a-SiC:H films deposited at lower substrate temperature (T-s) show degradation in their structural, optical and network properties. The hydrogen content (C-H) in the films was found to be increased with decrease of T-s studied. Photoluminescence spectra shift to higher energy and less FWHM at high T-s. Raman spectroscopic analysis showed that structural disorder increases with decrease in the T-s. (c) 2007
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-07-24T21:21:27Z
2011-12-26T12:48:16Z
2011-12-27T05:47:41Z
2011-07-24T21:21:27Z
2011-12-26T12:48:16Z
2011-12-27T05:47:41Z
2007
 
Type Article
 
Identifier MATERIALS LETTERS, 61(25), 4731-4734
0167-577X
http://dx.doi.org/10.1016/j.matlet.2007.03.029
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6542
http://hdl.handle.net/10054/6542
 
Language en