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Effect of pyrolyzing time and temperature on the bandgap of camphor-pyrolyzed semiconducting carbon films

DSpace at IIT Bombay

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Title Effect of pyrolyzing time and temperature on the bandgap of camphor-pyrolyzed semiconducting carbon films
 
Creator SHARON, M
JAIN, S
KICHAMBARE, PD
KUMAR, M
 
Subject natural source
solar-cell
tubules
camphor
pyrolysis
semiconductors
carbon
 
Description Intrinsic p- and n-type semiconducting carbon thin films have been synthesized by the pyrolysis of camphor vapor in an argon atmosphere at various temperatures for different periods of time. These films are characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscope (SEM) analyses, Hall measurement and electrical conductivity studies. The nature of conductivity of camphor-pyrolyzed semiconductors is found to be extremely sensitive to the pyrolyzing temperature and time. It is observed that an sp(2) content in the as-grown film of less than 33% yields a p-type semiconductor, whereas more than 33% sp(2) makes it n-type. The percentage contents of sp(2) and sp(3) carbon can be controlled by the temperature and time of pyrolysis. (C) 1998 Elsevier Science S.A. .
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-07-27T20:33:52Z
2011-12-26T12:58:19Z
2011-12-27T05:48:02Z
2011-07-27T20:33:52Z
2011-12-26T12:58:19Z
2011-12-27T05:48:02Z
1998
 
Type Article
 
Identifier MATERIALS CHEMISTRY AND PHYSICS, 56(3), 284-288
0254-0584
http://dx.doi.org/10.1016/S0254-0584(98)00180-1
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7322
http://hdl.handle.net/10054/7322
 
Language en