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One-dimensional simulation study of microcrystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1D

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Title One-dimensional simulation study of microcrystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1D
 
Creator TRIPATHI,S
VENKATARAMANI, N
DUSANE, RO
SCHROEDER, B
 
Subject computer simulation
grain boundaries
thin film transistors
chemical vapor deposition
elemental semiconductors
solar cells
 
Description Electronic transport in hydrogenated microcrystalline silicon (μc-Si:H) films largely depends on size and shape of small crystallites columnar grains, the fraction of amorphous silicon (a-Si:H) matrix, and the highly defective grain boundaries (GBs). Based on these we describe two simple 1-D models of μc-Si:H depending upon the conduction path. Two applications of these models are presented using AMPS-1D. First, we study the electronic transport in intrinsic μc-Si:H for thin-film transistor (TFT) application. Second, we analyze the performance of thin film p-i-n μc-Si:H solar cells with varying column heights in the intrinsic μc-Si:H layer. Such a study should lead to the identification of optimum process conditions of the preparation of these films by the Cat-CVD process.
 
Publisher Elsevier
 
Date 2009-06-02T10:32:13Z
2011-12-08T07:33:38Z
2011-12-26T13:02:19Z
2011-12-27T05:48:18Z
2009-06-02T10:32:13Z
2011-12-08T07:33:38Z
2011-12-26T13:02:19Z
2011-12-27T05:48:18Z
2006
 
Type Article
 
Identifier Thin Solid Films 501(1-2), 2006
http://hdl.handle.net/10054/1409
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1409
 
Language en