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Revisiting the B-factor variation in a-SiC:H deposited by HWCVD

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Title Revisiting the B-factor variation in a-SiC:H deposited by HWCVD
 
Creator SWAIN, BIBHU P
PATIL, SAMADHAN B
KUMBHAR, ALKA A
DUSANE, RO
 
Subject carbon
chemical vapor deposition
optical properties
film preparation
substrates
 
Description In order to understand material properties in a better way, it is always desirable to come up with new variables that might be related to the film properties. The B-parameter is such a variable, which relates to the quality of a-SiC:H films both in terms of electronic and optical properties. B (scaling factor) is essentially the slope of the straight-line part of the (αE)1/2–E (Tauc plot). Due to dependence on a large number of parameters and no detailed research, many previous authors have surmised that B has an ambiguous correlation with carbon content. We have made an attempt to establish the relation between the B-parameter as a quality-indicating factor of a-SiC:H films in both carbon- and silicon-rich material. For this we studied a-SiC:H films deposited by the HWCVD method with broad deposition parameters of substrate temperature (Ts), filament temperature (TF) and C2H2 fraction. Our results indicate that the B-parameter varies considerably with process conditions such as TF, total gas pressure and carbon content. An attempt is made to correl
 
Publisher Elsevier
 
Date 2009-06-04T08:53:36Z
2011-12-08T07:35:08Z
2011-12-26T13:02:19Z
2011-12-27T05:48:20Z
2009-06-04T08:53:36Z
2011-12-08T07:35:08Z
2011-12-26T13:02:19Z
2011-12-27T05:48:20Z
2003
 
Type Article
 
Identifier Thin Solid Films 430(1-2), 186-188
0040-6090
10.1016/S0040-6090(03)00107-X
http://hdl.handle.net/10054/1412
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1412
 
Language en