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Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD

DSpace at IIT Bombay

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Title Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD
 
Creator PATIL, SAMADHAN B
KUMBHAR, ALKA A
SARASWAT, SHWETA
DUSANE, RO
 
Subject light emitting diodes
photoluminescence
leakage currents
chemical vapor deposition
 
Description Preliminary results on the first hot wire deposited a-SiC:H based thin film light emitting p–i–n diode having the structure glass/TCO(SnO2:F)/p-a-SiC:H/i-SiC:H/n-a-SiC:H/Al are reported. The paper discusses the results of our attempts to optimize the p-, i- and the n-layers for the desired electrical and optical properties. The optimized p-layers have a bandgap Egnot, vert, similar2 eV and conductivity a little lower than 10−5 (Ω cm)−1. On the other hand, the optimized n-type a-SiC:H show a conductivity of not, vert, similar10−4 (Ω cm)−1 with bandgap 2.06 eV. The highest bandgap of the intrinsic layer is approximately 3.4 eV and shows room temperature photoluminescence peak at approximately 2.21 eV. Thin film p–i–n diodes having i-layers with Eg from 2.7 to 3.4 eV show white light emission at room temperature under forward bias of >5 V. However, the 50-nm thick devices show appreciable reverse leakage current and a low emission intensity, which we attribute to the contamination across the p–i interface since these devices are made in a single chamber with the same filament.
 
Publisher Elsevier
 
Date 2009-06-04T08:59:05Z
2011-12-08T07:35:38Z
2011-12-26T13:02:20Z
2011-12-27T05:48:22Z
2009-06-04T08:59:05Z
2011-12-08T07:35:38Z
2011-12-26T13:02:20Z
2011-12-27T05:48:22Z
2003
 
Type Article
 
Identifier Thin Solid Films 430(1-2), 257-260
0040-6090
10.1016/S0040-6090(03)00122-6
http://hdl.handle.net/10054/1413
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1413
 
Language en