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Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat- CVD using acetylene

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Title Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat- CVD using acetylene
 
Creator KUMBHAR, ALKA A
PATIL, SAMADHAN B
KUMAR, SANJAY
LAL, RAKESH
DUSANE, RO
 
Subject acetylene
hydrogenation
silicon alloys
spectrum analysis
photoluminescence
 
Description Hydrogenated amorphous silicon/carbon films (a-Si-C:H) are deposited from a silane and acetylene gas mixture by the catalytic chemical vapour deposition (Cat-CVD) technique. It is observed that under certain conditions of total gas pressure and filament temperature (TF), the optical bandgap varies non-linearly with the acetylene to silane (C2H2/SiH4) ratio, having a maximum value of 3.6 eV for a C2H2/SiH4 ratio ≥0.8. However, the deposition rate drastically reduces with an increase in acetylene fraction. FTIR spectra indicate that the total hydrogen content is lower compared to samples deposited by PECVD using similar gas mixtures, with hydrogen being preferentially attached to carbon rather than silicon atoms. The photoluminescence (PL) spectra of these films show PL in the visible spectral region at room temperature. The films with larger bandgap (>2.5 eV) exhibit PL at room temperature, with the emission having peak energy in the range 2.0–2.3 eV.
 
Publisher Elsevier
 
Date 2009-06-04T09:10:38Z
2011-12-08T07:37:38Z
2011-12-26T13:02:21Z
2011-12-27T05:48:26Z
2009-06-04T09:10:38Z
2011-12-08T07:37:38Z
2011-12-26T13:02:21Z
2011-12-27T05:48:26Z
2001
 
Type Article
 
Identifier Thin Solid Films 395(1-2), 244-248
0040-6090
0040-6090
http://hdl.handle.net/10054/1417
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1417
 
Language en