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Microstructural dependence of electrical transport in bulk CuxGe1−x alloys

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Field Value
 
Title Microstructural dependence of electrical transport in bulk CuxGe1−x alloys
 
Creator VITTA, SATISH
TANTRI, SHRIKARI P
 
Subject crystalline materials
microstructure
temperature
volume fraction
 
Description The electrical transport behavior in bulk processed Cu78.8Ge21.2 and Cu77.4Ge22.6 alloys has been studied as a function of temperature. The room temperature resistivity of the alloy with 21.2 at.% Ge was found to be 4.9 μΩ cm, an order of magnitude lower compared to the resistivity of the 22.6 at.% Ge alloy. The resistivity of both the alloys is different compared to thin films of equivalent composition which were prepared by a high temperature solid state reaction process. The difference in behavior is found to be due to the microstructure, volume fraction and morphology of the different phases, which depends on the actual method of processing the material.
 
Publisher Elsevier
 
Date 2009-06-13T05:11:43Z
2011-12-08T07:57:41Z
2011-12-26T13:02:31Z
2011-12-27T05:48:57Z
2009-06-13T05:11:43Z
2011-12-08T07:57:41Z
2011-12-26T13:02:31Z
2011-12-27T05:48:57Z
1998
 
Type Article
 
Identifier Materials Science and Engineering B 52(2-3), 185-188
0921-5107
10.1016/S0921-5107(97)00275-4
http://hdl.handle.net/10054/1477
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1477
 
Language en