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Photoelectrochemical laser imaging on anodically prepared alpha-PbO thin films

DSpace at IIT Bombay

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Title Photoelectrochemical laser imaging on anodically prepared alpha-PbO thin films
 
Creator SHARON, M
MNKHOPADHYAY, I
GHOSH, S
 
Subject alkaline-solution
lead-oxide
potentiodynamic anodization
gartner model
electrode
electrosynthesis
parameters
oxidation
tio2
photoelectrochemical laser imaging
lead oxide
gartner analysis
thin films
 
Description The influence of various potential windows on the synthesis of alpha-PbO and the uniformity of its formation over the entire surface of the lead electrode has been studied by scanning a laser beam over the entire surface and measuring the corresponding photocurrent using the photoelectrochemical laser imaging technique. This technique revealed that a very uniformly distributed highly (110) plane oriented thin film of alpha-PbO is obtained by potentiodynamic anodization of the lead electrode in an alkaline medium at 80 degrees C in the potential range of -0.32 to +0.08 V vs SCE, giving the highest (73%) quantum yield at 480 nm, an open-circuit photopotential of 800 mV and a short-circuit photocurrent of 5.5 mA cm(-2). Gartner analysis suggests that the highest photoactivity achieved with this material is due to the formation of a large space charge width (0.63 mu m) and diffusion length (0.36 mu m) of the minority carriers and absorption of almost 100% of the light (480 nm) within the space charge and diffusion regions.
 
Publisher SPRINGER VERLAG
 
Date 2011-08-30T09:48:50Z
2011-12-26T12:58:53Z
2011-12-27T05:49:33Z
2011-08-30T09:48:50Z
2011-12-26T12:58:53Z
2011-12-27T05:49:33Z
1999
 
Type Article
 
Identifier JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 3(3), 141-147
1432-8488
http://dx.doi.org/10.1007/s100080050140
http://dspace.library.iitb.ac.in/xmlui/handle/10054/12272
http://hdl.handle.net/10054/12272
 
Language en