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Influence of process pressure on HW-CVD deposited a-SiC : H films

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Title Influence of process pressure on HW-CVD deposited a-SiC : H films
 
Creator SWAIN, BP
 
Subject amorphous-silicon-carbide
chemical-vapor-deposition
hot-wire cvd
thin-film
electrical-properties
infrared-absorption
optical-properties
structural order
solar-cells
alloys
a-sic : h
hwcvd
ftir
raman and xps
 
Description Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH(4) and C(2)H(2) without hydrogen dilution by hot wire chemical vapor deposition (HW-CVD) technique. The compositional, optical, and structural properties of these films are systematically studied as a function of process pressure. The device quality a-SiC:H films with similar to 55% carbon content were deposited at a deposition rate 0.5 angstrom/s at low process pressure. However, a-SiC:H films deposited at higher process pressures show degradation in their structural and its network properties. The FTIR spectroscopic analysis has shown that there is a decrease in Si-C, Si-H and C-H bond densities at high process pressure. The hydrogen content (C(H)) in the films was found to be similar to 8 at.% over the entire range of process pressure studied. The band gap, however was found similar to 2.5 eV higher. High band gap at low hydrogen content has observed which may be due to presence of higher carbon incorporation. Raman spectroscopic analysis showed that structural disorder increases with increase in the process pressure. (c) 2006
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-07-28T09:58:47Z
2011-12-26T12:58:57Z
2011-12-27T05:49:45Z
2011-07-28T09:58:47Z
2011-12-26T12:58:57Z
2011-12-27T05:49:45Z
2006
 
Type Article
 
Identifier SURFACE & COATINGS TECHNOLOGY, 201(3-4), 1132-1137
0257-8972
http://dx.doi.org/10.1016/j.surfcoat.2006.01.059
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7371
http://hdl.handle.net/10054/7371
 
Language en