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Ion irradiation-induced modifications in the surface morphology of Ge20Se74Bi6 thin films

DSpace at IIT Bombay

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Field Value
 
Title Ion irradiation-induced modifications in the surface morphology of Ge20Se74Bi6 thin films
 
Creator SHARMA, P
VASHISTHA, A
GANESAN, V
JAIN, IP
 
Subject atomic-force microscopy
electrical-conductivity
silicon
glasses
chalcogenide
ion irradiation
thin films
atomic force microscopy
surface morphology
 
Description The swift heavy ion-induced changes in the surface morphology of Ge20Se74Bi6 thin films are observed using atomic force microscopy. Ge20Si74Bi6 thin films were irradiated with Ni ion of 75 MeV energy and the beam current during irradiation was 5 pnA and fluence was varied for different samples from 5 x 10(12) to 10(14) ions/cm(2). The AFM micrographs indicate special features on the surface resulting from electronic energy loss. (c) 2007
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-07-28T10:36:42Z
2011-12-26T12:59:04Z
2011-12-27T05:49:56Z
2011-07-28T10:36:42Z
2011-12-26T12:59:04Z
2011-12-27T05:49:56Z
2008
 
Type Article
 
Identifier JOURNAL OF ALLOYS AND COMPOUNDS, 462(1-2), 452-455
0925-8388
http://dx.doi.org/10.1016/j.jallcom.2007.09.058
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7379
http://hdl.handle.net/10054/7379
 
Language en