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Drain current model including velocity saturation for symmetric double-gate MOSFETs

DSpace at IIT Bombay

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Title Drain current model including velocity saturation for symmetric double-gate MOSFETs
 
Creator VENKATNARAYAN, HARIHARAN
VASI, J
RAMGOPAL RAO, V
 
Subject drain current
silicon carbide
nonmetals
technology
 
Description A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. Id-Vd, Id-Vg, gm -Vg, and gDS-Vd comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown.
 
Publisher IEEE
 
Date 2008-11-29T07:31:47Z
2011-11-25T12:37:17Z
2011-12-26T13:04:26Z
2011-12-27T05:50:13Z
2008-11-29T07:31:47Z
2011-11-25T12:37:17Z
2011-12-26T13:04:26Z
2011-12-27T05:50:13Z
2008
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 55(8), 2173-80
0018-9383
http://dx.doi.org/10.1109/TED.2008.926745
http://hdl.handle.net/10054/193
http://dspace.library.iitb.ac.in/xmlui/handle/10054/193
 
Language en_US